物料参数
Number of channels: | 4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 5.5 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 1.7 |
Vos (offset voltage at 25°C) (max) (mV): | 0.045 |
GBW (typ) (MHz): | 1 |
Features: | e-Trim™ |
Slew rate (typ) (V/µs): | 1 |
Rail-to-rail: | In, Out |
Offset drift (typ) (µV/°C): | 1 |
Iq per channel (typ) (mA): | 0.0235 |
Vn at 1 kHz (typ) (nV√Hz): | 60 |
CMRR (typ) (dB): | 121 |
Rating: | Catalog |
Operating temperature range (°C): | -40 to 125 |
Input bias current (max) (pA): | 0.8 |
Iout (typ) (A): | 0.06 |
Architecture: | CMOS |
Input common mode headroom (to negative supply) (typ) (V): | -0.1 |
Input common mode headroom (to positive supply) (typ) (V): | 0.1 |
Output swing headroom (to negative supply) (typ) (V): | 0.003 |
Output swing headroom (to positive supply) (typ) (V): | -0.003 |
THD + N at 1 kHz (typ) (%): | 0.002 |
Number of channels: | 4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 5.5 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 1.7 |
Vos (offset voltage at 25°C) (max) (mV): | 0.045 |
GBW (typ) (MHz): | 1 |
Features: | e-Trim™ |
Slew rate (typ) (V/µs): | 1 |
Rail-to-rail: | In, Out |
Offset drift (typ) (µV/°C): | 1 |
Iq per channel (typ) (mA): | 0.0235 |
Vn at 1 kHz (typ) (nV√Hz): | 60 |
CMRR (typ) (dB): | 121 |
Rating: | Catalog |
Operating temperature range (°C): | -40 to 125 |
Input bias current (max) (pA): | 0.8 |
Iout (typ) (A): | 0.06 |
Architecture: | CMOS |
Input common mode headroom (to negative supply) (typ) (V): | -0.1 |
Input common mode headroom (to positive supply) (typ) (V): | 0.1 |
Output swing headroom (to negative supply) (typ) (V): | 0.003 |
Output swing headroom (to positive supply) (typ) (V): | -0.003 |
THD + N at 1 kHz (typ) (%): | 0.002 |
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